Analyses of Surface Charging on Silicon Wafer during Ion Implantation
نویسندگان
چکیده
منابع مشابه
Mpnte Carlo Simulation of Silicon Amorphization During Ion Implantation
When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The thickness and spatial location of the amorphous layers determine the type of the extended defects and the number of point defects remaining in the silicon crystal after a recrystallization step. I t is believed that the lateral diffusion o...
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We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted singlecrystalline silicon using results of multidimensional Monte Carlo simulations. Our approach is based on the concept of the critical damage energy density [1]. Additionally, the self-annealing of radiation damage during ion implantation is taken into account because this effect is crucial...
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High-depth-resolution Rutherford Backscattering Spectrometry (RBS) combined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single crystal silicon substrates. Single wavelength multiple angle of incidence ellipsometry (MAIE) was applied to estimate the thickness of the surface layer. The thickness of the disordered layer ...
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Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
متن کاملIon implantation in silicon to facilitate testing of photonic circuits
In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can th...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1990
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1990.110.10_715